DiodesZetex BSS123WQ N channel-Channel MOSFET, 170 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123WQ-7-F
- N° de stock RS:
- 718-532
- Référence fabricant:
- BSS123WQ-7-F
- Fabricant:
- DiodesZetex
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
0,44 €
(TVA exclue)
0,53 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 2 940 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 120 | 0,088 € | 0,44 € |
| 125 - 495 | 0,08 € | 0,40 € |
| 500 - 2495 | 0,072 € | 0,36 € |
| 2500 + | 0,06 € | 0,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 718-532
- Référence fabricant:
- BSS123WQ-7-F
- Fabricant:
- DiodesZetex
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSS123WQ | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200mW | |
| Minimum Operating Temperature | -50°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Height | 1mm | |
| Width | 2.2mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSS123WQ | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200mW | ||
Minimum Operating Temperature -50°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Height 1mm | ||
Width 2.2mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The DiodesZetex N Channel enhancement mode MOSFET designed for efficient power management applications. This component is engineered to exhibit low on-state resistance while ensuring high-speed switching performance. It features a robust 100V drain-source voltage rating and is suitable for a range of automotive applications, thanks to its AEC-Q101 qualification and compliance with industry standards, such as IATF 16949. With a small footprint in the SOT323 package and a lead-free, green design, this MOSFET is an Ideal choice for space-constrained environments requiring reliable functionality and environmental compliance.
Low gate threshold voltage enhances efficiency in circuit designs
Exhibits low input capacitance for Faster switching speeds
Compatible with high drain-source voltage ratings ensuring durability
Designed with minimal input/output leakage under typical operating conditions
AEC-Q101 qualified for suitability in automotive applications
PPAP capable, suitable for industries requiring strict change control
Constructed from lead-free materials fully compliant with RoHS directives
Compact SOT323 package allows easy integration into designs
Liens connexes
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