ROHM RD3E07BBJHRB Type P-Channel Single MOSFETs, 78 A, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E07BBJHRBTL
- N° de stock RS:
- 687-470P
- Référence fabricant:
- RD3E07BBJHRBTL
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total 20 unités (conditionné en bande continue)*
16,40 €
(TVA exclue)
19,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 98 unité(s) expédiée(s) à partir du 12 novembre 2026
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Unité | Prix par unité |
|---|---|
| 20 - 48 | 0,82 € |
| 50 - 198 | 0,74 € |
| 200 - 998 | 0,595 € |
| 1000 + | 0,58 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-470P
- Référence fabricant:
- RD3E07BBJHRBTL
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 78A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | TO-252 (TL) | |
| Series | RD3E07BBJHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 77W | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.8mm | |
| Length | 10.5mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 78A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type TO-252 (TL) | ||
Series RD3E07BBJHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 77W | ||
Maximum Gate Source Voltage Vgs 5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Operating Temperature 175°C | ||
Width 6.8mm | ||
Length 10.5mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel power MOSFET designed for high performance in demanding applications. With a maximum continuous drain current of ±78A and a breakdown voltage of -30V, this MOSFET is ideal for use in automotive and industrial environments requiring robust efficiency. Its compact DPAK package enables easy integration into various designs, while its low on-resistance of 8.5mΩ significantly reduces energy loss. The product is also AEC-Q101 qualified, ensuring reliability in harsh conditions, making it a perfect choice for designers seeking high-quality and durable components for their electronic applications.
Features low on resistance for improved efficiency and reduced heat generation
Offers a maximum power dissipation of 77W for high power applications
Designed to withstand a wide operating temperature range of -55 to +175°C
AEC Q101 qualified, ensuring high reliability for automotive applications
Provides 100% avalanche testing for enhanced durability under stress
Complies with Pb free and RoHS standards for environmentally friendly use
Packaged in a DPAK format for easy mounting and integration
Supports a pulsed drain current capability of ±156A for dynamic load conditions.