ROHM RY7P250BM N-Channel Single MOSFETs, 300 A, 100 V Enhancement, 8-Pin DFN8080T8LSHAAI
- N° de stock RS:
- 687-343P
- Référence fabricant:
- RY7P250BMTBC
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (20 unités, conditionné en bande continue)*
100,30 €
(TVA exclue)
121,36 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 24 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 200 unité(s) expédiée(s) à partir du 26 novembre 2026
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Unité | Prix par unité |
|---|---|
| 20 - 98 | 5,015 € |
| 100 - 198 | 4,505 € |
| 200 + | 3,54 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-343P
- Référence fabricant:
- RY7P250BMTBC
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | DFN8080T8LSHAAI | |
| Series | RY7P250BM | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.86mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 340W | |
| Maximum Operating Temperature | 150°C | |
| Height | 800μm | |
| Width | 1.7mm | |
| Length | 1.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type DFN8080T8LSHAAI | ||
Series RY7P250BM | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.86mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 340W | ||
Maximum Operating Temperature 150°C | ||
Height 800μm | ||
Width 1.7mm | ||
Length 1.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM Power MOSFET designed for demanding applications requiring excellent efficiency and reliability. This MOSFET is ideal for use in Hot Swap Controllers and other power switching applications, where its low on-resistance of 1.86mΩ ensures minimal energy loss during operation. This component is RoHS and halogen-free, making it a safe choice for environmentally conscious designs. With advanced features like 100% Rg and UIS testing, it guarantees robust performance under varying conditions, making it suitable for high-performance and high-reliability electronic circuits.
Low on resistance for enhanced efficiency
Wide-SOA characteristics for superior reliability
Designed to handle continuous drain currents up to 250A
High pulsed drain current capability at ±900A
Excellent thermal management with thermal resistance of 0.44°C/W
Suitable for a wide operating temperature range of -55 to +175°C
Complies with RoHS and halogen-free standards.