Microchip TN2510 Type N-Channel Single MOSFETs, 0.73 A, 100 V Enhancement, 3-Pin SOT-89 TN2510N8-G
- N° de stock RS:
- 649-584
- Référence fabricant:
- TN2510N8-G
- Fabricant:
- Microchip
Offre groupée disponible
Sous-total (1 ruban de 5 unités)*
4,57 €
(TVA exclue)
5,53 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 475 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 5 - 45 | 0,914 € | 4,57 € |
| 50 - 245 | 0,804 € | 4,02 € |
| 250 - 495 | 0,722 € | 3,61 € |
| 500 + | 0,592 € | 2,96 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 649-584
- Référence fabricant:
- TN2510N8-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 0.73A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-89 | |
| Series | TN2510 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 0.73A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-89 | ||
Series TN2510 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Automotive Standard No | ||
The Microchip Low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Liens connexes
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