Microchip VP0808 Type P-Channel Single MOSFETs, 280 mA, 80 V Enhancement, 3-Pin TO-92 VP0808L-G
- N° de stock RS:
- 649-535
- Référence fabricant:
- VP0808L-G
- Fabricant:
- Microchip
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
6,60 €
(TVA exclue)
8,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 960 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,32 € | 6,60 € |
| 50 - 245 | 1,162 € | 5,81 € |
| 250 - 495 | 1,042 € | 5,21 € |
| 500 + | 0,826 € | 4,13 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 649-535
- Référence fabricant:
- VP0808L-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-92 | |
| Series | VP0808 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.080 mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 0.50mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-92 | ||
Series VP0808 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 0.080 mm | ||
Standards/Approvals RoHS Compliant | ||
Length 0.50mm | ||
Automotive Standard No | ||
The Microchip Enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
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