Microchip DN3135 Type N-Channel Single MOSFETs, 72 mA, 350 V Depletion, 3-Pin SOT-89 DN3135N8-G
- N° de stock RS:
- 649-459P
- Référence fabricant:
- DN3135N8-G
- Fabricant:
- Microchip
Offre groupée disponible
Consulter les options de prix de grosSous-total 50 unités (conditionné en bande continue)*
34,80 €
(TVA exclue)
42,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité |
|---|---|
| 50 - 245 | 0,696 € |
| 250 - 495 | 0,624 € |
| 500 + | 0,56 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 649-459P
- Référence fabricant:
- DN3135N8-G
- Fabricant:
- Microchip
Spécifications
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 72mA | |
| Maximum Drain Source Voltage Vds | 350V | |
| Package Type | SOT-89 | |
| Series | DN3135 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 72mA | ||
Maximum Drain Source Voltage Vds 350V | ||
Package Type SOT-89 | ||
Series DN3135 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Height 1.12mm | ||
Automotive Standard No | ||
The Microchip Low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage