STMicroelectronics M2TP80M12W2 8 Type N-Channel MOSFET Arrays, 30 A, 1200 V Enhancement, 32-Pin ACEPACK DMT-32
- N° de stock RS:
- 640-674
- Référence fabricant:
- M2TP80M12W2-2LA
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
50,18 €
(TVA exclue)
60,72 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 13 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 50,18 € |
| 5 + | 48,67 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 640-674
- Référence fabricant:
- M2TP80M12W2-2LA
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET Arrays | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | ACEPACK DMT-32 | |
| Series | M2TP80M12W2 | |
| Mount Type | Through Hole | |
| Pin Count | 32 | |
| Maximum Drain Source Resistance Rds | 114mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 1.10V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 44.50mm | |
| Width | 27.90 mm | |
| Standards/Approvals | AQG 324 | |
| Height | 5.90mm | |
| Number of Elements per Chip | 8 | |
| Automotive Standard | AEC | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET Arrays | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type ACEPACK DMT-32 | ||
Series M2TP80M12W2 | ||
Mount Type Through Hole | ||
Pin Count 32 | ||
Maximum Drain Source Resistance Rds 114mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 1.10V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 44.50mm | ||
Width 27.90 mm | ||
Standards/Approvals AQG 324 | ||
Height 5.90mm | ||
Number of Elements per Chip 8 | ||
Automotive Standard AEC | ||
- Pays d'origine :
- CN
The STMicroelectronics high-efficiency, automotive-grade power module built in the ACEPACK DMT-32 package. It implements a 3-phase four-wire power factor correction (PFC) topology using six second-generation silicon carbide (SiC) MOSFETs and two rectifier diodes. Designed for the PFC stage of on-board chargers (OBCs) in electric and hybrid vehicles, it offers a compact, thermally optimized solution with integrated temperature sensing.
1200 V silicon carbide MOSFETs with typical RDS(on) of 84 mΩ
Implements a 3-phase four-wire power factor correction (PFC) topology
Includes 1200 V / 20 A rectifier diodes
Integrated NTC thermistor for real-time temperature monitoring
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