STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin SCT040W65G3-4
- N° de stock RS:
- 366-221
- Référence fabricant:
- SCT040W65G3-4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
14,27 €
(TVA exclue)
17,27 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 60 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 14,27 € |
| 10 - 99 | 12,84 € |
| 100 + | 11,84 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 366-221
- Référence fabricant:
- SCT040W65G3-4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Operating Frequency | 1 MHz | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Output Power | 240W | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Width | 15.9 mm | |
| Standards/Approvals | RoHS | |
| Length | 20.1mm | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Operating Frequency 1 MHz | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Output Power 240W | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Width 15.9 mm | ||
Standards/Approvals RoHS | ||
Length 20.1mm | ||
Height 5.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability
Source sensing pin for increased efficiency
Liens connexes
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