STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin SCT040W65G3-4
- N° de stock RS:
- 366-221
- Référence fabricant:
- SCT040W65G3-4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
9,76 €
(TVA exclue)
11,81 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 56 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 9,76 € |
| 10 - 99 | 8,78 € |
| 100 + | 8,14 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 366-221
- Référence fabricant:
- SCT040W65G3-4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Output Power | 240W | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | RoHS | |
| Height | 5.1mm | |
| Length | 20.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Output Power 240W | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals RoHS | ||
Height 5.1mm | ||
Length 20.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability
Source sensing pin for increased efficiency
Liens connexes
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin SCT040W65G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin SCT055W65G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin SCT018W65G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin SCT027W65G3-4AG
- STMicroelectronics Sct N channel-Channel Power MOSFET 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7