STMicroelectronics N-Channel STO60 Type N-Channel MOSFET, 55 A, 600 V, 8-Pin TO-LL STO60N045DM9
- N° de stock RS:
- 358-979
- Référence fabricant:
- STO60N045DM9
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
8,54 €
(TVA exclue)
10,33 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 300 unité(s) expédiée(s) à partir du 18 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 8,54 € |
| 10 - 99 | 7,69 € |
| 100 - 499 | 7,09 € |
| 500 - 999 | 6,58 € |
| 1000 + | 5,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 358-979
- Référence fabricant:
- STO60N045DM9
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Output Power | 255W | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | STO60 | |
| Package Type | TO-LL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | N-Channel | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Standards/Approvals | RoHS | |
| Length | 11.88mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Output Power 255W | ||
Maximum Drain Source Voltage Vds 600V | ||
Series STO60 | ||
Package Type TO-LL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration N-Channel | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Standards/Approvals RoHS | ||
Length 11.88mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast recovery body diode
Very low FOM
Low input capacitance and resistance
100 percent avalanche tested
Extremely high dv by dt ruggedness