Infineon IMZC120 Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R078M2HXKSA1
- N° de stock RS:
- 351-933
- Référence fabricant:
- IMZC120R078M2HXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
9,62 €
(TVA exclue)
11,64 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 240 unité(s) expédiée(s) à partir du 31 décembre 2025
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 9,62 € |
| 10 - 99 | 8,65 € |
| 100 - 499 | 7,98 € |
| 500 - 999 | 7,41 € |
| 1000 + | 6,63 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 351-933
- Référence fabricant:
- IMZC120R078M2HXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | IMZC120 | |
| Package Type | PG-TO-247-4-U07 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 204mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.5V | |
| Maximum Power Dissipation Pd | 143W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 200°C | |
| Width | 16 mm | |
| Length | 23.5mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series IMZC120 | ||
Package Type PG-TO-247-4-U07 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 204mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.5V | ||
Maximum Power Dissipation Pd 143W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 200°C | ||
Width 16 mm | ||
Length 23.5mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET discrete with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
Easy paralleling
Liens connexes
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