Infineon IPF Type N-Channel Power Transistor, 138 A, 200 V Enhancement, 7-Pin PG-TO263-7 IPF067N20NM6ATMA1
- N° de stock RS:
- 349-407
- Référence fabricant:
- IPF067N20NM6ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
8,77 €
(TVA exclue)
10,61 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 1 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 8,77 € |
| 10 - 99 | 7,89 € |
| 100 - 499 | 7,27 € |
| 500 - 999 | 6,75 € |
| 1000 + | 6,05 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-407
- Référence fabricant:
- IPF067N20NM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 138A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-TO263-7 | |
| Series | IPF | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 6.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | 100% Avalanche Tested, IEC61249-2-21, MSL1 J-STD-020, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 138A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-TO263-7 | ||
Series IPF | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 6.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals 100% Avalanche Tested, IEC61249-2-21, MSL1 J-STD-020, RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving overall efficiency. With an excellent gate charge x RDS(on) product (FOM), it offers superior switching performance. The device also has very low reverse recovery charge (Qrr), ensuring efficient operation.
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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