Infineon CoolSiC Type N-Channel MOSFET, 24 A, 750 V Enhancement, 22-Pin PG-HDSOP-22 IMDQ75R090M1HXUMA1
- N° de stock RS:
- 349-045
- Référence fabricant:
- IMDQ75R090M1HXUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
13,09 €
(TVA exclue)
15,838 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 16 novembre 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 6,545 € | 13,09 € |
| 20 - 198 | 5,89 € | 11,78 € |
| 200 + | 5,435 € | 10,87 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-045
- Référence fabricant:
- IMDQ75R090M1HXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | CoolSiC | |
| Package Type | PG-HDSOP-22 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 117mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 128W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series CoolSiC | ||
Package Type PG-HDSOP-22 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 117mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 128W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon 750 V CoolSiC MOSFET G1 is built upon Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. This MOSFET is designed to withstand high temperature and harsh operating conditions, making it ideal for demanding applications. It enables the simplified and cost effective deployment of systems with high efficiency, meeting the evolving needs of power electronics in challenging environments.
Infineon proprietary die attach technology
Cutting edge top side cooling package
Driver source pin available
Enhanced robustness to withstand bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Best in class thermal dissipation
Reduced switching losses through improved gate control
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