Infineon 600V CoolMOS SiC N-Channel MOSFET, 30 A, 600 V, 22-Pin PG-HDSOP-22 IPQC60R017S7XTMA1

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N° de stock RS:
284-894
Référence fabricant:
IPQC60R017S7XTMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

600 V

Package Type

PG-HDSOP-22

Series

600V CoolMOS

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET is a high performance power MOSFET designed for low frequency switching applications. Built using cutting edge CoolMOS S7 technology, this device provides exceptional energy efficiency and outstanding price performance characteristics. The product features a compact PG HDSOP 22 package that supports high pulse current capability and efficient thermal performance. With its low RDS(on) value, it ensures minimal conduction losses, making it an excellent choice for solid state relays, circuit breakers, and line rectification in various demanding applications like computing and telecom. This MOSFET stands out for its reliable operation, enhanced system performance, and a robust design that accommodates high current requirements while maintaining a long lifespan.

Optimised for high efficiency in static switching
Compact footprint for easy integration
High pulse current capacity for power applications
Kelvin Source pin enhances switching performance
Compliant with MSL1 for seamless assembly
Reduces need for bulky heat sinks
Faster switching times than electromechanical devices
Robust reliability under extreme conditions