Infineon OptiMOS SiC N-Channel MOSFET, 205 A, 100 V, 3-Pin PG-TO220-3 IPP018N10N5AKSA1

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
284-887
Référence fabricant:
IPP018N10N5AKSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

205 A

Maximum Drain Source Voltage

100 V

Package Type

PG-TO220-3

Series

OptiMOS

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features is designed to deliver exceptional efficiency and reliability, catering to a wide array of applications. With its innovative structure, it facilitates high speed switching while ensuring low conduction losses, making it an ideal choice for power management systems and industrial applications. The product stands out for its premium thermal performance, allowing it to operate effectively under high load conditions. It is engineered to provide optimal power density, ensuring that space constraints within systems do not compromise performance. Whether used in automotive solutions or renewable energy technology, this MOSFET represents a robust solution that meets the demands of modern electronic design.

High speed switching capabilities
Low conduction losses enhance efficiency
Optimised for superior thermal performance
Robust operation under high load conditions
Supports compact power density needs
Versatile for automotive and renewable energy