Infineon OptiMOS SiC N-Channel MOSFET, 85 A, 100 V, 9-Pin PG-WHTFN-9 IQE065N10NM5CGSCATMA1

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
284-777
Référence fabricant:
IQE065N10NM5CGSCATMA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

85 A

Maximum Drain Source Voltage

100 V

Package Type

PG-WHTFN-9

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered for exceptional performance in synchronous rectification applications, delivering high efficiency and reliability. The advanced MOSFET technology makes it an ideal choice for demanding power supply designs, ensuring optimal thermal management and reduced energy loss. Designed to operate at 100V, this transistor exhibits impressive robustness through 100% avalanche testing, offering peace of mind for industrial applications.

Optimised for switch mode power supplies
N channel for enhanced switching
Superior thermal resistance ensures reliability
Pb free lead plating for environmental safety
Halogen free materials meet IEC standards

Liens connexes