Infineon OptiMOS SiC N-Channel MOSFET, 205 A, 100 V, 3-Pin PG-TO220-3 IPP018N10N5XKSA1

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
284-684
Référence fabricant:
IPP018N10N5XKSA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

205 A

Maximum Drain Source Voltage

100 V

Package Type

PG-TO220-3

Series

OptiMOS

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET with OptiMOS 5 Power Transistor revolutionises efficiency in high frequency applications, delivering exceptional performance without compromise. Designed specifically for demanding industrial environments, this N channel MOSFET excels in power management and thermal stability. With a robust on resistance and an impressive maximum operating temperature of 175°C, it effectively handles substantial loads, making it an ideal choice for various applications. Its advanced features ensure optimal switching performance, significantly enhancing the overall reliability of your electronics.

Optimised for high frequency switching
N channel design boosts power efficiency
Low on resistance ensures superior performance
Durable structure withstands extreme temperatures
Pb free and RoHS compliant for safety
Qualified for industrial applications per JEDEC