Nexperia MOSFETs N-Channel MOSFET, 330 A, 55 V Enhancement, 5-Pin LFPAK PSMN1R2-55SLHAX
- N° de stock RS:
- 219-464
- Référence fabricant:
- PSMN1R2-55SLHAX
- Fabricant:
- Nexperia
Sous-total (1 ruban de 1 unité)*
1,86 €
(TVA exclue)
2,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 1 987 unité(s) expédiée(s) à partir du 30 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 + | 1,86 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-464
- Référence fabricant:
- PSMN1R2-55SLHAX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 330A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | LFPAK | |
| Series | MOSFETs | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.03mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 8mm | |
| Length | 8mm | |
| Height | 1.6mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 330A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type LFPAK | ||
Series MOSFETs | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.03mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 8mm | ||
Length 8mm | ||
Height 1.6mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Avalanche rated and 100 % tested
Superfast switching with soft body diode recovery for low spiking and ringing
Narrow VGS(th) rating for easy paralleling and improved current sharing
Liens connexes
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