Nexperia PSM Type N-Channel MOSFET, 70 A, 25 V Enhancement, 5-Pin LFPAK PSMN2R0-25MLDX
- N° de stock RS:
- 219-381
- Référence fabricant:
- PSMN2R0-25MLDX
- Fabricant:
- Nexperia
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
0,80 €
(TVA exclue)
0,97 €
(TVA incluse)
Ajouter 112 rubans pour bénéficier d'une livraison gratuite
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- Plus 1 500 unité(s) expédiée(s) à partir du 23 février 2026
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Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 0,80 € |
| 10 - 99 | 0,73 € |
| 100 - 499 | 0,67 € |
| 500 - 999 | 0,61 € |
| 1000 + | 0,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-381
- Référence fabricant:
- PSMN2R0-25MLDX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.27mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34.4nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.27mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34.4nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Superfast switching with soft recovery
Qualified to 175 °C
Liens connexes
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