STMicroelectronics SCT Type N-Channel MOSFET, 29 A, 1200 V Enhancement, 4-Pin
- N° de stock RS:
- 215-223
- Référence fabricant:
- SCT015W120G3-4AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
61,10 €
(TVA exclue)
73,93 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 7 unité(s) expédiée(s) à partir du 21 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 61,10 € |
| 10 + | 55,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-223
- Référence fabricant:
- SCT015W120G3-4AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 167nC | |
| Maximum Power Dissipation Pd | 673W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 4.2 V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 167nC | ||
Maximum Power Dissipation Pd 673W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 4.2 V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Extremely low gate charge and input capacitance
Very fast and robust intrinsic body diode
Liens connexes
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT015W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT020W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT040W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT025W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT070W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin