STMicroelectronics SCT025H120G3AG Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG
- N° de stock RS:
- 214-952
- Référence fabricant:
- SCT025H120G3AG
- Fabricant:
- STMicroelectronics
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Consulter les options de prix de grosSous-total (1 unité)*
16,62 €
(TVA exclue)
20,11 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 16,62 € |
| 10 - 99 | 16,42 € |
| 100 + | 16,21 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-952
- Référence fabricant:
- SCT025H120G3AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-7 | |
| Series | SCT025H120G3AG | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.7V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.8mm | |
| Width | 10.4mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 15.25mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-7 | ||
Series SCT025H120G3AG | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.7V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Operating Temperature 175°C | ||
Height 4.8mm | ||
Width 10.4mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 15.25mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Liens connexes
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