STMicroelectronics HB Type P-Channel MOSFET, 650 V Depletion, 9-Pin ACEPACK SMIT STGSH80HB65DAG
- N° de stock RS:
- 152-183
- Référence fabricant:
- STGSH80HB65DAG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
18,54 €
(TVA exclue)
22,43 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 200 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 18,54 € |
| 10 - 99 | 17,11 € |
| 100 - 199 | 16,91 € |
| 200 + | 16,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 152-183
- Référence fabricant:
- STGSH80HB65DAG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | HB | |
| Package Type | ACEPACK SMIT | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 250W | |
| Forward Voltage Vf | 1.9V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 456nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 25.20mm | |
| Standards/Approvals | Automotive-grade | |
| Height | 4.05mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 650V | ||
Series HB | ||
Package Type ACEPACK SMIT | ||
Mount Type Surface | ||
Pin Count 9 | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 250W | ||
Forward Voltage Vf 1.9V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 456nC | ||
Maximum Operating Temperature 175°C | ||
Length 25.20mm | ||
Standards/Approvals Automotive-grade | ||
Height 4.05mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics device combines two IGBTs and diodes in half-bridge topology mounted on a very Compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included in every switch.
AQG 324 qualified
High-speed switching series
Minimized tail current
Tight parameter distribution
Low thermal resistance thanks to DBC substrate
Liens connexes
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