STMicroelectronics SCT060HU N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- N° de stock RS:
- 152-111
- Référence fabricant:
- SCT060HU75G3AG
- Fabricant:
- STMicroelectronics
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Nous ne savons pas si cet article sera de nouveau en stock, il n'est plus vendu par le fabricant.
- N° de stock RS:
- 152-111
- Référence fabricant:
- SCT060HU75G3AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | SCT060HU | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3V | |
| Maximum Gate Source Voltage Vgs | 18V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 19mm | |
| Height | 3.6mm | |
| Length | 14.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series SCT060HU | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3V | ||
Maximum Gate Source Voltage Vgs 18V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 19mm | ||
Height 3.6mm | ||
Length 14.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Liens connexes
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