STMicroelectronics SCT060HU Type N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- N° de stock RS:
- 152-111
- Référence fabricant:
- SCT060HU75G3AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
11,12 €
(TVA exclue)
13,46 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 3 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 11,12 € |
| 10 - 99 | 10,01 € |
| 100 + | 9,24 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 152-111
- Référence fabricant:
- SCT060HU75G3AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | HU3PAK | |
| Series | SCT060HU | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Gate Source Voltage Vgs | ±18 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 19 mm | |
| Standards/Approvals | RoHS | |
| Length | 14.1mm | |
| Height | 3.6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type HU3PAK | ||
Series SCT060HU | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Gate Source Voltage Vgs ±18 V | ||
Maximum Operating Temperature 175°C | ||
Width 19 mm | ||
Standards/Approvals RoHS | ||
Length 14.1mm | ||
Height 3.6mm | ||
Automotive Standard No | ||
- Pays d'origine :
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Liens connexes
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