STMicroelectronics MDmesh II Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N
- N° de stock RS:
- 151-952
- Référence fabricant:
- STD13NM60N
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 5 unités)*
17,52 €
(TVA exclue)
21,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En voie de retrait du marché
- 2 245 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le ruban* |
|---|---|---|
| 5 - 45 | 3,504 € | 17,52 € |
| 50 - 120 | 3,022 € | 15,11 € |
| 125 + | 2,368 € | 11,84 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 151-952
- Référence fabricant:
- STD13NM60N
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | MDmesh II | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.36Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 6.6mm | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series MDmesh II | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.36Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 6.6mm | ||
Height 2.4mm | ||
Length 10.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Liens connexes
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