STMicroelectronics MDmesh II Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N
- N° de stock RS:
- 151-952
- Référence fabricant:
- STD13NM60N
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 ruban de 5 unités)*
12,36 €
(TVA exclue)
14,955 €
(TVA incluse)
Ajouter 35 unités pour bénéficier d'une livraison gratuite
En stock
- 2 260 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 5 - 45 | 2,472 € | 12,36 € |
| 50 - 95 | 2,348 € | 11,74 € |
| 100 - 495 | 2,172 € | 10,86 € |
| 500 - 995 | 2,002 € | 10,01 € |
| 1000 + | 1,932 € | 9,66 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 151-952
- Référence fabricant:
- STD13NM60N
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh II | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.36Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 6.6 mm | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh II | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.36Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 6.6 mm | ||
Height 2.4mm | ||
Length 10.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Liens connexes
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