STMicroelectronics SuperMESH Type N-Channel MOSFET, 300 mA, 600 V Enhancement, 4-Pin SOT-223 STN1NK60Z
- N° de stock RS:
- 151-928
- Référence fabricant:
- STN1NK60Z
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 ruban de 20 unités)*
5,52 €
(TVA exclue)
6,68 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 3 960 unité(s) expédiée(s) à partir du 30 décembre 2025
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 20 - 180 | 0,276 € | 5,52 € |
| 200 - 480 | 0,262 € | 5,24 € |
| 500 - 980 | 0,243 € | 4,86 € |
| 1000 - 1980 | 0,223 € | 4,46 € |
| 2000 + | 0,215 € | 4,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 151-928
- Référence fabricant:
- STN1NK60Z
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperMESH | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 15Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.9nC | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.8mm | |
| Standards/Approvals | RoHS | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Distrelec Product Id | 304-37-475 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperMESH | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 15Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.9nC | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.8mm | ||
Standards/Approvals RoHS | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Distrelec Product Id 304-37-475 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established strip based Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
SD improved capability
Zener protected
Liens connexes
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