STMicroelectronics STripFET Type N-Channel MOSFET, 75 A, 200 V Enhancement, 3-Pin TO-263 STB75NF20
- N° de stock RS:
- 151-918
- Référence fabricant:
- STB75NF20
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 1000 unités)*
3 147,00 €
(TVA exclue)
3 808,00 €
(TVA incluse)
Ajouter 1000 unités pour bénéficier d'une livraison gratuite
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 3,147 € | 3 147,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 151-918
- Référence fabricant:
- STB75NF20
- Fabricant:
- STMicroelectronics
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | STripFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.034Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 50°C | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.85mm | |
| Width | 10.4 mm | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series STripFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.034Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 50°C | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 15.85mm | ||
Width 10.4 mm | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Power MOSFET realized with unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in Advanced high efficiency isolated DC to DC converters.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
Liens connexes
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