STMicroelectronics SuperMESH Type N-Channel MOSFET, 1 A, 800 V Enhancement, 3-Pin TO-252 STD1NK80ZT4
- N° de stock RS:
- 151-904
- Référence fabricant:
- STD1NK80ZT4
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 2500 unités)*
1 037,50 €
(TVA exclue)
1 255,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,415 € | 1 037,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 151-904
- Référence fabricant:
- STD1NK80ZT4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | SuperMESH | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 16Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series SuperMESH | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 16Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Gate charge minimized
Very low intrinsic capacitance
Zener-protected
Liens connexes
- STMicroelectronics SuperMESH Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 STD1NK80ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 STD4NK80ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 1000 V Enhancement, 3-Pin TO-252 STD2NK100Z
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD2HNK60Z
- STMicroelectronics SuperMESH Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD3NK60ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252 STD5NK50ZT4
- STMicroelectronics SuperMESH Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-252 STD5NK40ZT4