STMicroelectronics MDmesh Type N-Channel MOSFET, 21 A, 500 V Enhancement, 3-Pin TO-220FP STP12NM50FP
- N° de stock RS:
- 151-409
- Référence fabricant:
- STP12NM50FP
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
105,00 €
(TVA exclue)
127,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 900 unité(s) expédiée(s) à partir du 13 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 200 | 2,10 € | 105,00 € |
| 250 - 450 | 2,001 € | 100,05 € |
| 500 + | 1,73 € | 86,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 151-409
- Référence fabricant:
- STP12NM50FP
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220FP | |
| Series | MDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 30.6mm | |
| Standards/Approvals | RoHS | |
| Length | 15.85mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220FP | ||
Series MDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Operating Temperature 150°C | ||
Height 30.6mm | ||
Standards/Approvals RoHS | ||
Length 15.85mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics N-channel Power MOSFET, This device developed using MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low on resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST'sproprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Liens connexes
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