STMicroelectronics STGP10M65DF2, Type N-Channel IGBT, 20 A 650 V, 3-Pin TO-220, Through Hole

Voir l’ensemble des IGBTs
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N° de stock RS:
906-2795
Référence fabricant:
STGP10M65DF2
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Maximum Continuous Collector Current Ic

20A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Pays d'origine :
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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