STMicroelectronics STGP10M65DF2 IGBT, 20 A 650 V, 3-Pin TO-220, Through Hole

Voir l’ensemble des IGBTs
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N° de stock RS:
906-2795
Référence fabricant:
STGP10M65DF2
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

115 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 15.75mm

Gate Capacitance

840pF

Minimum Operating Temperature

-55 °C

Energy Rating

0.66mJ

Maximum Operating Temperature

+175 °C

Pays d'origine :
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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