Infineon, Type N-Channel IGBT Module, 55 A 1.2 kV, 35-Pin ECONO3, Through Hole
- N° de stock RS:
- 838-6888
- Référence fabricant:
- FP40R12KE3GBOSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
95,65 €
(TVA exclue)
115,74 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 6 unité(s) expédiée(s) à partir du 16 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 95,65 € |
| 5 + | 93,26 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 838-6888
- Référence fabricant:
- FP40R12KE3GBOSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 55A | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 210W | |
| Package Type | ECONO3 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 35 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Series | FP40R12KE3G | |
| Height | 17mm | |
| Length | 122mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 55A | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 210W | ||
Package Type ECONO3 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 35 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Series FP40R12KE3G | ||
Height 17mm | ||
Length 122mm | ||
Automotive Standard No | ||
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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