Infineon FS75R12KT4B15BOSA1, Type N-Channel 3 Phase Bridge IGBT Module, 75 A 1200 V, 28-Pin ECONO2, PCB

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N° de stock RS:
838-6860
Référence fabricant:
FS75R12KT4B15BOSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current Ic

75A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Configuration

3 Phase Bridge

Package Type

ECONO2

Mount Type

PCB

Channel Type

Type N

Pin Count

28

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Width

45 mm

Length

107.5mm

Height

17mm

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.

The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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