Infineon FP35R12KT4B11BOSA1, Type N-Channel IGBT Module, 35 A 1200 V, 23-Pin ECONO2, Clamp

Voir l’ensemble des IGBTs

Sous-total (1 boîte de 10 unités)*

737,08 €

(TVA exclue)

891,87 €

(TVA incluse)

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  • Expédition à partir du 17 mai 2027
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Unité
Prix par unité
La Boite*
10 +73,708 €737,08 €

*Prix donné à titre indicatif

N° de stock RS:
124-8795
Référence fabricant:
FP35R12KT4B11BOSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

35A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

210W

Package Type

ECONO2

Mount Type

Clamp

Channel Type

Type N

Pin Count

23

Switching Speed

1MHz

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

17mm

Width

45 mm

Length

107.5mm

Automotive Standard

No

Pays d'origine :
CN

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.

The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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