IXYS IXA37IF1200HJ, Type N-Channel XPT IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, PCB
- N° de stock RS:
- 808-0215
- Numéro d'article Distrelec:
- 302-53-265
- Référence fabricant:
- IXA37IF1200HJ
- Fabricant:
- IXYS
Retiré-e du marché
- N° de stock RS:
- 808-0215
- Numéro d'article Distrelec:
- 302-53-265
- Référence fabricant:
- IXA37IF1200HJ
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Maximum Continuous Collector Current Ic | 58A | |
| Product Type | XPT IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 195W | |
| Package Type | ISOPLUS247 | |
| Mount Type | PCB | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 70ns | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Operating Temperature | 125°C | |
| Series | Planar | |
| Width | 0.1 mm | |
| Length | 20.6mm | |
| Standards/Approvals | Epoxy meets UL 94V-0, IEC 60747, RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Maximum Continuous Collector Current Ic 58A | ||
Product Type XPT IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 195W | ||
Package Type ISOPLUS247 | ||
Mount Type PCB | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 70ns | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Operating Temperature 125°C | ||
Series Planar | ||
Width 0.1 mm | ||
Length 20.6mm | ||
Standards/Approvals Epoxy meets UL 94V-0, IEC 60747, RoHS | ||
Automotive Standard No | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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