Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
- N° de stock RS:
- 796-5058
- Référence fabricant:
- GT30J121
- Fabricant:
- Toshiba
3 En stock, livraison sous 1 jour(s) (stock Europe)
70 En stock, livraison sous 3 à 5 jours (stock Europe)
Ajouté
Prix la pièce
3,60 €
(TVA exclue)
4,36 €
(TVA incluse)
| Unité | Prix par unité |
| 1 - 24 | 3,60 € |
| 25 - 49 | 3,42 € |
| 50 - 199 | 3,22 € |
| 200 - 399 | 2,88 € |
| 400 + | 2,69 € |
- N° de stock RS:
- 796-5058
- Référence fabricant:
- GT30J121
- Fabricant:
- Toshiba
Documentation technique
Législations et de normes
Détails du produit
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Spécifications
Attribut | Valeur |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 170 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.9 x 4.8 x 20mm |
| Maximum Operating Temperature | +150 °C |
- N° de stock RS:
- 796-5058
- Référence fabricant:
- GT30J121
- Fabricant:
- Toshiba