STMicroelectronics STGB10NB37LZT4, Type N-Channel IGBT, 10 A 375 V, 3-Pin TO-263, Surface
- N° de stock RS:
- 686-8341
- Référence fabricant:
- STGB10NB37LZT4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
9,36 €
(TVA exclue)
11,32 €
(TVA incluse)
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- Plus 142 unité(s) expédiée(s) à partir du 23 février 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 4,68 € | 9,36 € |
| 10 - 18 | 4,445 € | 8,89 € |
| 20 - 48 | 4,00 € | 8,00 € |
| 50 - 98 | 3,605 € | 7,21 € |
| 100 + | 3,425 € | 6,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 686-8341
- Référence fabricant:
- STGB10NB37LZT4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 10A | |
| Maximum Collector Emitter Voltage Vceo | 375V | |
| Maximum Power Dissipation Pd | 125W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 8μs | |
| Minimum Operating Temperature | -65°C | |
| Maximum Gate Emitter Voltage VGEO | 12 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.6mm | |
| Length | 28.9mm | |
| Width | 10.4 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 10A | ||
Maximum Collector Emitter Voltage Vceo 375V | ||
Maximum Power Dissipation Pd 125W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 8μs | ||
Minimum Operating Temperature -65°C | ||
Maximum Gate Emitter Voltage VGEO 12 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Operating Temperature 175°C | ||
Height 4.6mm | ||
Length 28.9mm | ||
Width 10.4 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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