STMicroelectronics, Type N-Channel IGBT, 10 A 375 V, 3-Pin TO-263, Surface

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N° de stock RS:
168-6461
Référence fabricant:
STGB10NB37LZT4
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

10A

Maximum Collector Emitter Voltage Vceo

375V

Maximum Power Dissipation Pd

125W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

8μs

Minimum Operating Temperature

-65°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.8V

Maximum Gate Emitter Voltage VGEO

12 V

Maximum Operating Temperature

175°C

Height

4.6mm

Length

28.9mm

Standards/Approvals

RoHS

Automotive Standard

No

Pays d'origine :
MY

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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