STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263), Surface Mount
- N° de stock RS:
- 168-6461
- Référence fabricant:
- STGB10NB37LZT4
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 1000 unités)*
1 414,00 €
(TVA exclue)
1 711,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 04 mai 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 1,414 € | 1 414,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 168-6461
- Référence fabricant:
- STGB10NB37LZT4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Maximum Continuous Collector Current | 20 A | |
| Maximum Collector Emitter Voltage | 375 V | |
| Maximum Gate Emitter Voltage | 12V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 9.35 x 4.6mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -65 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Maximum Continuous Collector Current 20 A | ||
Maximum Collector Emitter Voltage 375 V | ||
Maximum Gate Emitter Voltage 12V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 9.35 x 4.6mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -65 °C | ||
- Pays d'origine :
- MY
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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