Semikron Danfoss SKM200GB176D, Type N-Channel IGBT Module, 260 A 1700 V, 7-Pin SEMITRANS, Panel

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Voir l’ensemble des IGBTs
Offre groupée disponible

Sous-total (1 unité)*

207,46 €

(TVA exclue)

251,03 €

(TVA incluse)

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Dernier stock RS
  • 27 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
  • 74 unité(s) finale(s) expédiée(s) à partir du 21 mai 2026

Unité
Prix par unité
1 - 9207,46 €
10 - 19202,14 €
20 +197,09 €

*Prix donné à titre indicatif

N° de stock RS:
505-3217
Référence fabricant:
SKM200GB176D
Fabricant:
Semikron Danfoss
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Marque

Semikron Danfoss

Maximum Continuous Collector Current Ic

260A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1700V

Number of Transistors

2

Package Type

SEMITRANS

Mount Type

Panel

Channel Type

Type N

Pin Count

7

Maximum Collector Emitter Saturation Voltage VceSAT

2.45V

Minimum Operating Temperature

150°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

-40°C

Height

30mm

Length

106.4mm

Standards/Approvals

No

Series

SKM200GB176D

Automotive Standard

No

Dual IGBT Modules


A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package

Suitable for switching frequencies up to 12kHz

Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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