Semikron Danfoss SKM200GB125D, Type N-Channel IGBT Module, 200 A 1200 V, 3-Pin SEMITRANS, Panel
- N° de stock RS:
- 468-2454
- Référence fabricant:
- SKM200GB125D
- Fabricant:
- Semikron Danfoss
Offre groupée disponible
Sous-total (1 unité)*
364,70 €
(TVA exclue)
441,29 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 66 unité(s) expédiée(s) à partir du 16 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 1 | 364,70 € |
| 2 - 4 | 346,48 € |
| 5 - 9 | 334,42 € |
| 10 - 19 | 322,03 € |
| 20 + | 306,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 468-2454
- Référence fabricant:
- SKM200GB125D
- Fabricant:
- Semikron Danfoss
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Semikron Danfoss | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 200A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Package Type | SEMITRANS | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | 150°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.85V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | -40°C | |
| Standards/Approvals | No | |
| Series | SKM200GB125D | |
| Height | 30.5mm | |
| Width | 61.4 mm | |
| Length | 106.4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Semikron Danfoss | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 200A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Package Type SEMITRANS | ||
Mount Type Panel | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature 150°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.85V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature -40°C | ||
Standards/Approvals No | ||
Series SKM200GB125D | ||
Height 30.5mm | ||
Width 61.4 mm | ||
Length 106.4mm | ||
Automotive Standard No | ||
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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