Semikron Danfoss SKM200GB125D Dual Half Bridge IGBT Module, 200 A 1200 V, 3-Pin SEMITRANS3, Panel Mount
- N° de stock RS:
- 468-2454
- Référence fabricant:
- SKM200GB125D
- Fabricant:
- Semikron Danfoss
Offre groupée disponible
Sous-total (1 unité)*
364,70 €
(TVA exclue)
441,29 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 66 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 1 unité(s) expédiée(s) à partir du 28 janvier 2026
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Unité | Prix par unité |
|---|---|
| 1 - 1 | 364,70 € |
| 2 - 4 | 346,48 € |
| 5 - 9 | 334,42 € |
| 10 - 19 | 322,03 € |
| 20 + | 306,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 468-2454
- Référence fabricant:
- SKM200GB125D
- Fabricant:
- Semikron Danfoss
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Semikron Danfoss | |
| Maximum Continuous Collector Current | 200 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Configuration | Dual Half Bridge | |
| Package Type | SEMITRANS3 | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Series | |
| Dimensions | 106.4 x 61.4 x 30.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -40 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Semikron Danfoss | ||
Maximum Continuous Collector Current 200 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Configuration Dual Half Bridge | ||
Package Type SEMITRANS3 | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Series | ||
Dimensions 106.4 x 61.4 x 30.5mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -40 °C | ||
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
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