Infineon IKB20N60TATMA1 IGBT, 41 A 600 V, 3-Pin PG-TO263-3, Through Hole
- N° de stock RS:
- 273-7448
- Référence fabricant:
- IKB20N60TATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 1000 unités)*
1 639,00 €
(TVA exclue)
1 983,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 25 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 1,639 € | 1 639,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7448
- Référence fabricant:
- IKB20N60TATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current | 41 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 166 W | |
| Package Type | PG-TO263-3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current 41 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 166 W | ||
Package Type PG-TO263-3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
The Infineon IGBT has TRENCHSTOP and Field stop technology with soft, fast recovery anti parallel emitter controlled HE diode. This IGBT is qualified according to JEDEC1 for target applications. It has positive temperature coefficient in VCE sat. This IGBT is designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners.
RoHS compliant
High ruggedness
Low gate charge
Pb free lead plating
Stable temperature behaviour
Very high switching speed
Very low VCEsat and low EMI
High ruggedness
Low gate charge
Pb free lead plating
Stable temperature behaviour
Very high switching speed
Very low VCEsat and low EMI
Liens connexes
- Infineon IKB20N60TATMA1 IGBT 3-Pin PG-TO263-3, Through Hole
- Infineon IGB15N60TATMA1 IGBT 3-Pin PG-TO263-3
- Infineon IGB50N60TATMA1 IGBT 3-Pin PG-TO263-3
- Infineon AIKW50N60CTXKSA1 IGBT 3-Pin PG-TO263-3
- Infineon IGB15N65S5ATMA1 IGBT PG-TO263-3
- Infineon IKB20N60H3ATMA1 IGBT 3-Pin PG-TO263-3, Through Hole
- Infineon IGB30N60H3ATMA1 IGBT 3-Pin PG-TO263-3, Through Hole
- Infineon IKW20N60TFKSA1 IGBT 3-Pin PG-TO247-3
