STMicroelectronics IGBT, 80 A 650 V, 3-Pin TO-247
- N° de stock RS:
- 261-5071
- Référence fabricant:
- STGWA80H65DFBAG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 tube de 30 unités)*
132,48 €
(TVA exclue)
160,29 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 30 | 4,416 € | 132,48 € |
| 60 - 60 | 4,362 € | 130,86 € |
| 90 + | 4,309 € | 129,27 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 261-5071
- Référence fabricant:
- STGWA80H65DFBAG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 535W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 15V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 21 mm | |
| Height | 5mm | |
| Length | 15.8mm | |
| Standards/Approvals | No | |
| Series | STGWA | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 535W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 15V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 21 mm | ||
Height 5mm | ||
Length 15.8mm | ||
Standards/Approvals No | ||
Series STGWA | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics IGBT is developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High-speed switching series
Maximum junction temperature TJ is 175 degree C
Minimized tail current
Tight parameter distribution
Positive temperature VCE(sat) coefficient
Soft and very fast recovery antiparallel diode
Liens connexes
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