Infineon FP30R06W1E3BOMA1 IGBT Module 600 V

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Sous-total (24 unités, dans un plateau de 24)*

500,54 €

(TVA exclue)

605,66 €

(TVA incluse)

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Unité
Prix par unité
le plateau*
24 - 2420,856 €500,54 €
48 +19,813 €475,51 €

*Prix donné à titre indicatif

N° de stock RS:
244-5395
Référence fabricant:
FP30R06W1E3BOMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

115W

Number of Transistors

7

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

150°C

Series

FP30R06W1E3B

Height

12mm

Standards/Approvals

RoHS

Width

33.8mm

Length

62.8mm

Automotive Standard

No

Infineon FP30R06W1E3B Series IGBT Module, 600V Max Collector-Emitter Voltage, 115W Maximum Power Dissipation - FP30R06W1E3BOMA1


This IGBT module is a power semiconductor device designed to switch and control high-voltage DC in industrial converters and power systems. It operates across a broad temperature span and is intended for applications where high voltage handling and defined gate control are required.

Features and Benefits:


• 600 V rating enables handling of high-voltage DC circuits
• 115 W maximum dissipation allows sustained power handling
• VGE 20 V gate tolerance supports standard gate-drive voltages
• Low VCE(sat) 2 V reduces conduction losses during on-state
• Seven-transistor topology increases switching density and functionality
• RoHS compliance ensures restriction of hazardous substances

Applications


• Suitable for medium-voltage inverter stages in industrial drives
• Ideal for power conversion in renewable-energy inverters
• Used with motor-control units requiring multiple switching elements
• Can be used for DC-DC conversion in high-voltage systems
• Suitable for laboratory test rigs evaluating high-temperature switching

What thermal extremes can it withstand during operation?


It is rated to function down to −40 °C and up to 150 °C continuous junction temperature.

How does the transistor count influence circuit design?


Having seven transistors permits Compact multi-switch arrangements and reduces external component count for multi-phase or parallel configurations.

What electrical limit defines the off-state voltage capability?


The module's maximum collector-emitter voltage specifies its off-state voltage withstand at 600 V.

How should designers account for power loss in thermal planning?


Use the 115 W maximum power dissipation figure to size heatsinking and thermal interfaces to maintain junction temperature limits.

Are there any environmental supply restrictions indicated for selection?


The unit meets RoHS requirements restricting certain hazardous materials in the assembly.

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