STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin TO-263
- N° de stock RS:
- 204-9869
- Référence fabricant:
- STGB50H65FB2
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 204-9869
- Référence fabricant:
- STGB50H65FB2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current (Ic) | 86 A | |
| Maximum Collector Emitter Voltage (Vceo) | 650 V | |
| Pin Count | 3 | |
| Package Type | TO-263 | |
| Maximum Gate Emitter Voltage (VGEO) | 20 V | |
| Number of Transistors | 1 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current (Ic) 86 A | ||
Maximum Collector Emitter Voltage (Vceo) 650 V | ||
Pin Count 3 | ||
Package Type TO-263 | ||
Maximum Gate Emitter Voltage (VGEO) 20 V | ||
Number of Transistors 1 | ||
- Pays d'origine :
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
Minimized tail current
Tight parameter distribution
Low thermal resistance
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