onsemi, Type N-Channel IGBT Module, 50 A 1200 V, 22-Pin Q0BOOST, Surface
- N° de stock RS:
- 195-8768
- Référence fabricant:
- NXH100B120H3Q0PTG
- Fabricant:
- onsemi
Informations sur le stock actuellement non accessibles
- N° de stock RS:
- 195-8768
- Référence fabricant:
- NXH100B120H3Q0PTG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 186W | |
| Package Type | Q0BOOST | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 22 | |
| Minimum Operating Temperature | 150°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | -40°C | |
| Series | NXH100B120H3Q0 | |
| Standards/Approvals | No | |
| Length | 66.2mm | |
| Height | 11.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 186W | ||
Package Type Q0BOOST | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 22 | ||
Minimum Operating Temperature 150°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature -40°C | ||
Series NXH100B120H3Q0 | ||
Standards/Approvals No | ||
Length 66.2mm | ||
Height 11.9mm | ||
Automotive Standard No | ||
The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage
Liens connexes
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