onsemi NXH100B120H3Q0STG, Type N-Channel IGBT Module, 50 A 1200 V, 22-Pin Q0BOOST, Surface

Voir l’ensemble des IGBTs
Actuellement indisponible
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Options de conditionnement :
N° de stock RS:
195-8771
Référence fabricant:
NXH100B120H3Q0STG
Fabricant:
onsemi
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Marque

onsemi

Maximum Continuous Collector Current Ic

50A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

186W

Number of Transistors

2

Package Type

Q0BOOST

Mount Type

Surface

Channel Type

Type N

Pin Count

22

Minimum Operating Temperature

150°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.3V

Maximum Operating Temperature

-40°C

Width

32.8 mm

Length

66.2mm

Height

11.9mm

Standards/Approvals

No

Series

NXH100B120H3Q0

Automotive Standard

No

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ

Fast IGBT with low VCE(SAT) for high efficiency

25 A / 1600 V Bypass and Anti−parallel Diodes

Low VF bypass diodes for excellent efficiency in bypass mode

SiC Rectifier Specification: VF = 1.44 V

SiC Diode for high speed switching

Solder pin and press-fit pin options available

Flexible mounting

Applications

MPPT Boost Stage

Battery Charger Boost Stage

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