Références fabricant

ROHM RGT00TS65DGC11 IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole

N° de stock RS:: 185-0952
Référence fabricant:: RGT00TS65DGC11
Fabricant:: ROHM

ROHM RGT00TS65DGC11 IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole

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RS n'aura plus ce produit en stock.

N° de stock RS:: 185-0952
Référence fabricant:: RGT00TS65DGC11
Fabricant:: ROHM

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	ROHM
	Maximum Continuous Collector Current	85 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±30V
	Maximum Power Dissipation	277 W
	Number of Transistors	1
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	16 x 5 x 21mm
	Maximum Operating Temperature	+175 °C
	Gate Capacitance	2770pF
	Minimum Operating Temperature	-40 °C

	Sélectionner tout
	Marque ROHM
	Maximum Continuous Collector Current 85 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±30V
	Maximum Power Dissipation 277 W
	Number of Transistors 1
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Transistor Configuration Single
	Dimensions 16 x 5 x 21mm
	Maximum Operating Temperature +175 °C
	Gate Capacitance 2770pF
	Minimum Operating Temperature -40 °C

Datasheet RGT00TS65DGC11

Pays d'origine :: TH

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating , RoHS Compliant

ROHM RGT00TS65DGC11 IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole

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