Vishay, Type P-Channel IGBT, 8-Pin PowerPAK SO-8, Surface

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N° de stock RS:
180-7319
Numéro d'article Distrelec:
303-97-242
Référence fabricant:
SI7489DP-T1-E3
Fabricant:
Vishay
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Marque

Vishay

Product Type

IGBT

Maximum Power Dissipation Pd

83W

Package Type

PowerPAK SO-8

Mount Type

Surface

Channel Type

Type P

Pin Count

8

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

50 V

Maximum Operating Temperature

150°C

Length

6.25mm

Height

1.12mm

Standards/Approvals

IEC 61249-2-21

Energy Rating

61mJ

Automotive Standard

No

Pays d'origine :
CN

Vishay MOSFET


The Vishay surface mount P-channel SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 41mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 28A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• New low thermal resistance PowerPAK package with low 1.07mm profile

• Operating temperature ranges between -55°C and 150°C

• PWM optimised

• TrenchFET power MOSFET

Applications


• Half-bridge motor drives

• High voltage non-synchronous buck converters

• Load switches

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

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