Infineon FF300R12ME4B11BPSA1 Series IGBT Module, 450 A 1200 V, 11-Pin ECONOD, PCB Mount

Voir l’ensemble des IGBTs

Sous-total (1 boîte de 6 unités)*

786,87 €

(TVA exclue)

952,11 €

(TVA incluse)

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  • Expédition à partir du 05 janvier 2027
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Unité
Prix par unité
La Boite*
6 +131,145 €786,87 €

*Prix donné à titre indicatif

N° de stock RS:
168-8780
Référence fabricant:
FF300R12ME4B11BPSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current

450 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1600 W

Package Type

ECONOD

Configuration

Series

Mounting Type

PCB Mount

Channel Type

N

Pin Count

11

Switching Speed

1MHz

Transistor Configuration

Series

Dimensions

122.5 x 62.5 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Pays d'origine :
CN

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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