IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole
- N° de stock RS:
- 168-4503
- Référence fabricant:
- IXGH6N170
- Fabricant:
- IXYS
Sous-total (1 tube de 30 unités)*
268,77 €
(TVA exclue)
325,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 29 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 + | 8,959 € | 268,77 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 168-4503
- Référence fabricant:
- IXGH6N170
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Maximum Continuous Collector Current | 6 A | |
| Maximum Collector Emitter Voltage | 1700 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | TO-247AD | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.3 x 21.46mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Maximum Continuous Collector Current 6 A | ||
Maximum Collector Emitter Voltage 1700 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type TO-247AD | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.46mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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