IXYS IXGH6N170, Type N-Channel IGBT, 12 A 1700 V, 3-Pin TO-247AD, Through Hole
- N° de stock RS:
- 194-760
- Numéro d'article Distrelec:
- 302-53-417
- Référence fabricant:
- IXGH6N170
- Fabricant:
- IXYS
Offre groupée disponible
Sous-total (1 unité)*
12,54 €
(TVA exclue)
15,17 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 32 unité(s) expédiée(s) à partir du 25 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 12,54 € |
| 5 - 24 | 11,30 € |
| 25 - 49 | 10,45 € |
| 50 - 99 | 9,77 € |
| 100 + | 9,09 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 194-760
- Numéro d'article Distrelec:
- 302-53-417
- Référence fabricant:
- IXGH6N170
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 12A | |
| Maximum Collector Emitter Voltage Vceo | 1700V | |
| Maximum Power Dissipation Pd | 75W | |
| Package Type | TO-247AD | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | International Standard Packages | |
| Series | High Voltage | |
| Length | 19.81mm | |
| Width | 15.75 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 12A | ||
Maximum Collector Emitter Voltage Vceo 1700V | ||
Maximum Power Dissipation Pd 75W | ||
Package Type TO-247AD | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals International Standard Packages | ||
Series High Voltage | ||
Length 19.81mm | ||
Width 15.75 mm | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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