onsemi, Type N-Channel IGBT, 10 A 430 V, 3-Pin TO-252, Surface

Voir l’ensemble des IGBTs
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N° de stock RS:
166-3807
Référence fabricant:
ISL9V2040D3ST
Fabricant:
onsemi
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Marque

onsemi

Maximum Continuous Collector Current Ic

10A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

430V

Maximum Power Dissipation Pd

130W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.9V

Maximum Gate Emitter Voltage VGEO

±10 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

EcoSPARK

Automotive Standard

No

Energy Rating

200mJ

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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