Références fabricant

Infineon IKY50N120CH3XKSA1 IGBT, 100 A 1200 V, 4-Pin TO-247

N° de stock RS:: 162-3316
Référence fabricant:: IKY50N120CH3XKSA1
Fabricant:: Infineon

Infineon IKY50N120CH3XKSA1 IGBT, 100 A 1200 V, 4-Pin TO-247

Indisponible

RS n'aura plus ce produit en stock.

N° de stock RS:: 162-3316
Référence fabricant:: IKY50N120CH3XKSA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Maximum Continuous Collector Current Ic	100A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	652W
	Package Type	TO-247
	Pin Count	4
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.35V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	41.2mm
	Height	5.1mm
	Width	15.9 mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Maximum Continuous Collector Current Ic 100A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 652W
	Package Type TO-247
	Pin Count 4
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.35V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 41.2mm
	Height 5.1mm
	Width 15.9 mm
	Automotive Standard No

ESD Control Selection Guide V1

Responding to the market requirement of high power density and highest performance discrete products Infineon introduces the new Kelvin Emitter TO-247PLUS 4pin package for 1200V IGBT. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses Ets.

Extremely low control inductance loop with extra emitter pin for driver feedback

20% reduction in total switching losses compared to 3pin package using same technology

Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint

Highest efficiency with lowest switching losses 1200 V IGBT

High power density 1200V discrete IGBT

Lower thermal resistance

Infineon IKY50N120CH3XKSA1 IGBT, 100 A 1200 V, 4-Pin TO-247

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